Ion-beam Modification of the Local Luminescent Properties of Hexagonal Boron Nitride

Hexagonal boron nitride is a promising material of modern optoelectronics. Point defects in this can serve as single-photon sources. In paper we investigate the modification luminescent properties hexagonal by means local irradiation with focused gallium and helium ion beams. It demonstrated that intensity band-to-band cathodoluminescence monotonically decreases increasing fluence for both helium. The luminescence band about 2 eV may become more intense after exposure to He ions certain fluence. effect complete quenching used estimate diffusion length excess charge carriers. Keywords: point defects, cathodoluminescence, scanning microscope,